RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs

Harris

Description

RFP30N06LE, RF1S30N06LE, SEMICONDUCTOR RF1S30N06LESM July 1995 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power .
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.

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Datasheet Specifications

Part number: RF1S30N06LE
Manufacturer: Harris
File Size: 90.96 KB
Datasheet: RF1S30N06LE-Harris.pdf
Description: N-Channel Enhancement-Mode Power MOSFETs

Features

* 30A, 60V
* rDS(ON) = 0.047Ω
* 2kV ESD Protected
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve

Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Packages JEDEC TO-220AB SOURCE DRAIN G

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RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs Harris

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