MPSA65 Datasheet - Fairchild Semiconductor

MPSA65 PNP Darlington Transistor

MPSA65 / MMBTA65 / PZTA65 Discrete POWER & Signal Technologies MPSA65 MMBTA65 PZTA65 C BE TO-92 C SOT-23 Mark: 2W E B C SOT-223 C B E PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value VCES Collector-Emitter Voltage 30 VCBO VEBO IC Collector-Base Voltage Em.

MPSA65 Datasheet (27.66 KB)