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ISL9N307AD3ST - N-Channel Power MOSFET

Description

This device employs a new advanced trench MOSFET technology and

Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Full PDF Text Transcription

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ISL9N307AD3ST February 2002 ISL9N307AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.006Ω (Typ), VGS = 10V • rDS(ON) = 0.010Ω (Typ), VGS = 4.
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