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ISL9N307AS3ST - N-Channel Power MOSFET

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N307AP3/ISL9N307AS3ST January 2002 ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.006Ω (Typ), VGS = 10V • rDS(ON) = 0.010Ω (Typ), VGS = 4.5V • Qg (Typ) = 28nC, VGS = 5V • Qgd (Typ) = 10nC • CISS (Typ) = 3000pF DRAIN (FLANGE) SOURCE DRAIN GATE D Applications • DC/DC converters GATE SOURCE G DRAIN (FLANGE) S TO-263AB Symbol VDSS VGS TO-220AB Ratings 30 ±20 75 52 16 Figure 4 100 0.