IRFZ24 Datasheet - Fairchild Semiconductor

IRFZ24 Power MOSFET

IRFZ24 Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* 175°C Operating Temperature

* Lower Leakage Current: 10µA (Max.) @ VDS = 60V

* Lower RDS(ON):

Datasheet Details

IRFZ24

Fairchild Semiconductor

207.75 KB

Power mosfet.

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IRFZ24 Power MOSFET Fairchild Semiconductor

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