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IRFI830B 500V N-Channel MOSFET

IRFI830B Description

IRFW830B / IRFI830B November 2001 IRFW830B / IRFI830B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI830B Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

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500V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI830B-like datasheet