IRFI830 500V N-Channel MOSFET

Fairchild Semiconductor

Description

IRFW830B / IRFI830B November 2001 IRFW830B / IRFI830B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRFI830
Manufacturer: Fairchild Semiconductor
File Size: 677.19 KB
Datasheet: IRFI830_FairchildSemiconductor.pdf
Description: 500V N-Channel MOSFET

Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

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IRFI830 500V N-Channel MOSFET Fairchild Semiconductor

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