IRFI510 - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFI510
Manufacturer	Fairchild Semiconductor
File Size	253.63 KB
Description	Advanced Power MOSFET
Datasheet	IRFI510_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ. ) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Conti.

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Published: Apr 16, 2005 |