IRFI550A - (IRFI550A / IRFW550A) Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFI550A
Manufacturer	Fairchild Semiconductor
File Size	292.98 KB
Description	(IRFI550A / IRFW550A) Advanced Power MOSFET
Datasheet	IRFI550A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Conti.

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Published: Feb 3, 2007 |