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IRFI520A - Advanced Power MOSFET

Download the IRFI520A datasheet PDF. This datasheet also covers the IRFW520A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ. ) Ο I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Cu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFW520A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFI520N Power MOSFET International Rectifier
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Other Datasheets by Fairchild (onsemi)

Part Number Description
IRFI510 Advanced Power MOSFET
IRFI510A Advanced Power MOSFET
IRFI530A Advanced Power MOSFET
IRFI540A Advanced Power MOSFET
IRFI550A (IRFI550A / IRFW550A) Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C ) * Ο Ο Ο Value 100 9.2 6.
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