IRF634 - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF634
Manufacturer	Fairchild Semiconductor
File Size	224.03 KB
Description	Advanced Power MOSFET
Datasheet	IRF634_FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 0.327Ω (Typ. ) 1 2 3 IRF634A BVDSS = 250 V RDS(on) = 0.45Ω ID = 8.1 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous.

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Published: Apr 16, 2005 |