IRF634B - N-Channel BFET MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF634B
Manufacturer	Fairchild Semiconductor
File Size	660.24 KB
Description	N-Channel BFET MOSFET
Datasheet	IRF634B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drai.

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Published: Apr 16, 2005 |