IRF630 - N-Channel Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF630
Manufacturer	Fairchild Semiconductor
File Size	127.15 KB
Description	N-Channel Power MOSFET
Datasheet	IRF630_FairchildSemiconductor.pdf

9A, 200V.
rDS(ON) = 0.400Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconduct.

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Published: Apr 16, 2005 |