IRF630NL - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF630NL
Manufacturer	International Rectifier
File Size	240.87 KB
Description	Power MOSFET
Datasheet	IRF630NL_InternationalRectifier.pdf

IRF630NL Product details

Description

l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universal

Features

IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (.0 1 4) 2 .92 (.11 5 ) 2 .64 (.10 4 ) 1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LING D IM E N S IO N : INC H 3 O UTL IN E C O NF O R M S TO J E DE.

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Published: Apr 16, 2005 |