Datasheet4U Logo Datasheet4U.com

IRF630 - N-channel MOSFET

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

Features

  • Order code VDS IRF630 200 V.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB).

📥 Download Datasheet

Datasheet preview – IRF630

Datasheet Details

Part number IRF630
Manufacturer STMicroelectronics
File Size 447.71 KB
Description N-channel MOSFET
Datasheet download datasheet IRF630 Datasheet
Additional preview pages of the IRF630 datasheet.

📁 Similar Datasheet

  • IRF630 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF630 - Power MOSFET (Vishay)
  • IRF630 - N-channel mosfet transistor (Inchange Semiconductor)
  • IRF630 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • IRF630A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF630A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF630B - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF630F - N-Channel MOSFET Transistor (Inchange)
  • IRF630FI - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF630M - N-Channel MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics
  • IRF630FI - N-CHANNEL MOSFET
  • IRF630FP - N-CHANNEL MOSFET
  • IRF630S - N-Channel Power MOSFET
  • IRF634 - N-CHANNEL Power MOSFET
  • IRF634FP - N-CHANNEL Power MOSFET
  • IRF620 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • IRF620FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • IRF621 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630 200 V • Extremely high dv/dt capability • Very low intrinsic capacitance • Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB) Applications • Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
Published: |