IRF624B - 250V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF624B
Manufacturer	Fairchild ↗ Semiconductor
File Size	874.76 KB
Description	250V N-Channel MOSFET
Datasheet	IRF624B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dr.

📁 IRF624B Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 16, 2005 |