IRF620B - 200V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF620B
Manufacturer	Fairchild Semiconductor
File Size	875.32 KB
Description	200V N-Channel MOSFET
Datasheet	IRF620B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

📁 IRF620B Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 16, 2005 |