Part number:
HGT4E30N60B3DS
Manufacturer:
Fairchild Semiconductor
File Size:
214.44 KB
Description:
60a/ 600v/ ufs series n-channel igbt.
HGT4E30N60B3DS_FairchildSemiconductor.pdf
Datasheet Details
HGT4E30N60B3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used
HGT4E30N60B3DS_FairchildSemiconductor.pdf
Datasheet Details
HGT4E30N60B3DS
Fairchild Semiconductor
214.44 KB
60a/ 600v/ ufs series n-channel igbt.
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