HGT4E30N60B3DS - 60A 600V UFS Series N-Channel IGBT

Fairchild Semiconductor

Datasheet Details

Part number	HGT4E30N60B3DS
Manufacturer	Fairchild Semiconductor
File Size	214.44 KB
Description	60A 600V UFS Series N-Channel IGBT
Datasheet	HGT4E30N60B3DS_FairchildSemiconductor.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |