Part number:
HGT4E20N60A4DS
Manufacturer:
Fairchild Semiconductor
File Size:
204.32 KB
Description:
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT4E20N60A4DS_FairchildSemiconductor.pdf
Datasheet Details
HGT4E20N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used
HGT4E20N60A4DS_FairchildSemiconductor.pdf
Datasheet Details
HGT4E20N60A4DS
Fairchild Semiconductor
204.32 KB
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
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