HGT4E20N60A4DS - 600V SMPS Series N-Channel IGBT

Fairchild Semiconductor

Datasheet Details

Part number	HGT4E20N60A4DS
Manufacturer	Fairchild Semiconductor
File Size	204.32 KB
Description	600V SMPS Series N-Channel IGBT
Datasheet	HGT4E20N60A4DS_FairchildSemiconductor.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. These IGBT’s are ideal for many high voltage switching.

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Published: Mar 23, 2005 |