FQPF6N80T - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQPF6N80T
Manufacturer	Fairchild Semiconductor
File Size	458.02 KB
Description	N-Channel MOSFET
Datasheet	FQPF6N80T Datasheet
Additional preview pages of the FQPF6N80T datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

3.3 A, 800 V, RDS(on) = 1.95 Ω (Max. ) @ VGS = 10 V, ID = 1.65 A.
Low Gate Charge (Typ. 31 nC).
Low Crss (Typ. 14 pF).
100% Avalanche Tested.
100% Package Isolation Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

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Published: Aug 21, 2024 |