FQPF12N50
Description
Product Summary
The FQP12N50 & FQPF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
600V@150℃ 12A < 0.52Ω
TO 220
TO 220F
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP12N50/FQB12N50 FQPF12N50
Drain-Source Voltage VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
IDM IAR EAR EAS dv/dt
12 8.4
48 5.5 454 908 40
12- 8.4-
TC=25°C Power Dissipation B Derate...
