FQPF12N60
Description
Product Summary
The FQP12N60 & FQPF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
700V@150℃ 12A < 0.55Ω
TO-220
Top View
TO-220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP12N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
IDM IAR EAR EAS dv/dt
12 12- 9.7 9.7-
48 5.5 450 900 50
TC=25°C Power Dissipation B Derate above 25o...
