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FDZ2551N - Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON).

Features

  • = 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V.
  • = Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8.
  • = Ultra-thin package: less than 0.70 mm height when mounted to PCB.
  • = Outstanding thermal transfer characteristics: significantly better than SO-8.
  • = Ultra-low Qg x RDS(ON) figure-of-merit.
  • = High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ2551N November 1999 ADVANCE INFORMATION FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features •= 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. •= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. •= Ultra-thin package: less than 0.70 mm height when mounted to PCB.
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