FDV302P - Digital FET/ P-Channel

Product Overview

Fairchild Semiconductor

Part number	FDV302P
Manufacturer	Fairchild Semiconductor
File Size	63.55 KB
Description	Digital FET/ P-Channel
Datasheet	FDV302P Datasheet
Additional preview pages of the FDV302P datasheet.

This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

-25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. SOT-23 Mark:302 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS.

📁 Similar Datasheet

FDV301N-F169 - N-Channel Digital FET (ON Semiconductor)
FDV304P-F169 - P-Channel Digital FET (ON Semiconductor)
FDV-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter (Premo)
FDV0530 - Metal Alloy Inductors (TOKO)
FDV0618 - Metal Alloy Inductors (TOKO)
FDV0620 - Metal Alloy Inductors (TOKO)
FDV0630 - Fixed Inductors (TOKO)
FDV0840 - Metal Alloy Inductors (TOKO)

Other Datasheets by Fairchild Semiconductor

Published: Mar 30, 2005 |