FDV303N - N-Channel Digital FET

Fairchild Semiconductor

Datasheet Details

Part number	FDV303N
Manufacturer	Fairchild Semiconductor
File Size	149.41 KB
Description	N-Channel Digital FET
Datasheet	FDV303N-FairchildSemiconductor.pdf

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount pa.

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Published: Dec 29, 2016 |