FDV304P - Digital FET/ P-Channel

Fairchild Semiconductor

Datasheet Details

Part number	FDV304P
Manufacturer	Fairchild Semiconductor
File Size	63.92 KB
Description	Digital FET/ P-Channel
Datasheet	FDV304P_FairchildSemiconductor.pdf

This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

-25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Vol.

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Published: Mar 30, 2005 |