FDS8958B - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS8958B
Manufacturer	Fairchild Semiconductor
File Size	1.16 MB
Description	MOSFET
Datasheet	FDS8958B-FairchildSemiconductor.pdf

FDS8958B Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. RoHS Compliant DC-DC Conversion BLU and motor

Features

Q1: N-Channel.
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A.
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel.
Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A.
Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A.
HBM ESD protection level > 3.5 kV (Note 3) General.

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Published: Jan 11, 2017 |