FDS8958A_F085 - Dual N&P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS8958A_F085
Manufacturer	Fairchild Semiconductor
File Size	743.95 KB
Description	Dual N&P-Channel MOSFET
Datasheet	FDS8958A_F085-FairchildSemiconductor.pdf

FDS8958A_F085 Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Features

Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V.
Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V.
Fast switching speed.
High power and handling capability in a widely used surface mount package.
Qualified to AEC Q101.
RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS V.

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Published: Sep 15, 2015 |