Datasheet4U Logo Datasheet4U.com

FDS6299S - 30V N-Channel PowerTrench SyncFET

Description

The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Features

  • 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested Termination is Lead-free and RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Vo.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6298 N-Channel MOSFET ON Semiconductor
FDS6570A N-Channel MOSFET ON Semiconductor
FDS6574A N-Channel MOSFET ON Semiconductor
FDS6575 P-Channel 20V MOSFET VBsemi
FDS6612A N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDS6294 N-Channel MOSFET
FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET
FDS6064N3 N-Channel MOSFET
FDS6064N7 N-Channel MOSFET
FDS6162N3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FDS6299S 30V N-Channel PowerTrench® SyncFET™ November 2007 tm FDS6299S 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Applications • Synchronous Rectifier for DC/DC Converters • Notebook Vcore low side switch • Point of load low side switch Features • 21 A, 30 V. RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.
Published: |