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FDS4897AC - MOSFET

Description

Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A 100% UIL Tested RoHS

Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4897AC Dual N & P-Channel PowerTrench® MOSFET FDS4897AC October 2008 Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel „ Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A „ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A „ 100% UIL Tested „ RoHS Compliant These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
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