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FDN86501LZ - MOSFET

The FDN86501LZ by Fairchild Semiconductor is a MOSFET. Below is the official datasheet preview.

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Official preview page of the FDN86501LZ MOSFET datasheet (Fairchild Semiconductor).

FDN86501LZ Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielde

Features

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