FDMS86263P - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS86263P
Manufacturer	Fairchild Semiconductor
File Size	310.18 KB
Description	MOSFET
Datasheet	FDMS86263P Datasheet
Additional preview pages of the FDMS86263P datasheet.

Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. Active Clamp Switch Load Switch Top Bottom Pin 1 SS D S S GS D SD D D D GD D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage G

Features

Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A.
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A.
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg.
This product is optimised for fast switching.

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Published: Jan 10, 2017 |