FDMS86200 Datasheet (Fairchild Semiconductor)

FDMS86200, N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application * DC-DC Conversion Top Bottom Pin 1 S S S S G S S D D D G D D

FDMS86200 Features

* Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A

* Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* MSL1 robust package design

* 100% UIL tested

* RoHS Compliant General Descr