FDMS86200 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS86200
Manufacturer	Fairchild Semiconductor
File Size	401.71 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200 Datasheet
Additional preview pages of the FDMS86200 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC-DC Conversion Top Bottom Pin 1 S S S S G S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Contin

Features

Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A.
Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

📁 Similar Datasheet

FDMS86200 - N-Channel MOSFET (ON Semiconductor)
FDMS86200DC - N-Channel MOSFET (ON Semiconductor)
FDMS86255 - N-Channel MOSFET (ON Semiconductor)
FDMS86263P - P-Channel MOSFET (ON Semiconductor)
FDMS86101 - N-Channel MOSFET (ON Semiconductor)
FDMS86101DC - N-Channel MOSFET (ON Semiconductor)
FDMS86163P - P-Channel MOSFET (ON Semiconductor)
FDMS86181 - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDMS86200DC - MOSFET
FDMS86200DC - MOSFET
FDMS86201 - N-Channel MOSFET
FDMS86202 - MOSFET
FDMS86202ET120 - MOSFET
FDMS86200DC - MOSFET

Published: Aug 8, 2013 |