FDMS86181 Datasheet (Fairchild Semiconductor) - N-Channel Shielded Gate PowerTrench MOSFET

FDMS86181, N-Channel Shielded Gate PowerTrench MOSFET

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applicati

FDMS86181 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A

* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A

* ADD

* 50% lower Qrr than other MOSFET suppliers

* Lowers switching noise/EMI

* MSL1 robust package design