Datasheet4U Logo Datasheet4U.com

FDMS3686S - MOSFET

FDMS3686S Description

FDMS3686S PowerTrench® Power Stage FDMS3686S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3686S Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A
* Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 21 A
* Low inductance packaging shortens rise/

FDMS3686S Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE G1 D1 D1 D1

📥 Download Datasheet

Preview of FDMS3686S PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDMS3606AS - Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3660S - Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3662 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3664S - Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3669S - Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3672 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3500 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3572 - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMS3686S-like datasheet