Datasheet4U Logo Datasheet4U.com

FDMC8462 - N-Channel Power Trench MOSFET

Description

Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A Low Profile - 1mm max in Power 33 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® pro

Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC8462 N-Channel MOSFET ON Semiconductor
FDMC8010 N-Channel MOSFET ON Semiconductor
FDMC8010DC N-Channel MOSFET ON Semiconductor
FDMC8010ET30 N-Channel MOSFET ON Semiconductor
FDMC8015L N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDMC8010 N-Channel PowerTrench MOSFET
FDMC8010DC N-Channel Dual Cool 33 PowerTrench MOSFET
FDMC8010ET30 MOSFET
FDMC8015L MOSFET
FDMC8026S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMC8462 N-Channel Power Trench® MOSFET March 2008 FDMC8462 N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ tm Features General Description „ Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A „ Low Profile - 1mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Published: |