FDMC8360L Datasheet (Fairchild Semiconductor) - N-Channel Shielded Gate Power Trench MOSFET

FDMC8360L, N-Channel Shielded Gate Power Trench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Application * DC-DC Conversion Pin 1 Pin

FDMC8360L Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A

* Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free

* 100% UIL Tested

* RoHS Compl