FDMC8360L - N-Channel Shielded Gate Power Trench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMC8360L
Manufacturer	Fairchild Semiconductor
File Size	377.00 KB
Description	N-Channel Shielded Gate Power Trench MOSFET
Datasheet	FDMC8360L_FairchildSemiconductor.pdf

FDMC8360L Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC Conversion Pin 1 Pin 1 S S S S G S S D D D G D D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source V

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A.
Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A.
High performance technology for extremely low rDS(on).
Termination is Lead-free.
100% UIL Tested.
RoHS Compliant General.

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Published: Jan 12, 2014 |