FDMC8010ET30 Datasheet (Fairchild Semiconductor)

FDMC8010ET30, MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and

FDMC8010ET30 Features

* Extended TJ rating to 175°C

* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A

* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free and RoHS Compliant January 2015 General Descripti