FDMC8327L - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMC8327L
Manufacturer	Fairchild Semiconductor
File Size	297.44 KB
Description	MOSFET
Datasheet	FDMC8327L_FairchildSemiconductor.pdf

FDMC8327L Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC-DC Conversion Top Bottom 8765 DD D D S D S D S D G D 1 234 GS S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren

Features

Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A.
Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A.
Low Profile - 0.8mm max in Power 33.
100% UIL test.
RoHS Compliant General.

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Published: Jan 12, 2014 |