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FDMC7680 N-Channel MOSFET

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Description

FDMC7680 N-Channel Power Trench® MOSFET July 2009 FDMC7680 30 V, 14.8 A, 7.2 m: .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Features

* Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A
* Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A
* High performance technology for extremely low rDS(on)

Applications

* common in Notebook Computers and Portable Battery Packs. Application
* DC - DC Buck Converters
* Notebook battery power management
* Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 www. DataSheet4U. com MOSFET Max

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