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FDMC7672 - N-Channel Power Trench MOSFET

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FDMC7672 Product details

Description

Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Noteb

Features

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