FDMC510P Datasheet (Fairchild Semiconductor)

FDMC510P, MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.

Applications * Battery Management * Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum

FDMC510P Features

* Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A

* Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A

* Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A

* Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A

* High performance trench technology for extremely low r