FDMC510P - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC510P
Manufacturer	Fairchild Semiconductor
File Size	262.94 KB
Description	MOSFET
Datasheet	FDMC510P Datasheet
Additional preview pages of the FDMC510P datasheet.

Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness. Battery Management Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter

Features

Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A.
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A.
Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A.
Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant.
HBM ESD cap.

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Published: Jan 10, 2017 |