FDFMA3N109 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

The FDFMA3N109 by Fairchild Semiconductor is a Integrated P-Channel PowerTrench MOSFET and Schottky Diode. Below is the official datasheet preview.

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FDFMA3N109 Integrated P-Channel PowerTrench MOSFET and Schottky Diode by Fairchild Semiconductor - Datasheet Preview — Official preview page of the **FDFMA3N109** Integrated P-Channel PowerTrench MOSFET and Schottky Diode datasheet (Fairchild Semiconductor).

Datasheet Details

Part number	FDFMA3N109
Manufacturer	Fairchild Semiconductor
File Size	419.70 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFMA3N109_FairchildSemiconductor.pdf
Additional preview pages of the FDFMA3N109 datasheet.

FDFMA3N109 Product details

Description

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.

Features

a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

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Published: Oct 19, 2006 |