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FDFMA2N028Z - Integrated N-Channel PowerTrench MOSFET and Schottky Diode

The FDFMA2N028Z by Fairchild Semiconductor is a Integrated N-Channel PowerTrench MOSFET and Schottky Diode. Below is the official datasheet preview.

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Official preview page of the FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode datasheet (Fairchild Semiconductor).

Datasheet Details

Part number FDFMA2N028Z
Manufacturer Fairchild Semiconductor
File Size 662.11 KB
Description Integrated N-Channel PowerTrench MOSFET and Schottky Diode
Datasheet download datasheet FDFMA2N028Z_FairchildSemiconductor.pdf
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FDFMA2N028Z Product details

Description

MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.It

Features

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