FDFMA2P857 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

The FDFMA2P857 by Fairchild Semiconductor is a Integrated P-Channel PowerTrench MOSFET and Schottky Diode. Below is the official datasheet preview.

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FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode by Fairchild Semiconductor - Datasheet Preview — Official preview page of the **FDFMA2P857** Integrated P-Channel PowerTrench MOSFET and Schottky Diode datasheet (Fairchild Semiconductor).

Datasheet Details

Part number	FDFMA2P857
Manufacturer	Fairchild Semiconductor
File Size	407.86 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFMA2P857_FairchildSemiconductor.pdf
Additional preview pages of the FDFMA2P857 datasheet.

FDFMA2P857 Product details

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

Features

MOSFET:.
Max rDS(on) = 120mΩ at VGS =.
4.5V, ID =.
3.0A.
Max rDS(on) = 160mΩ at VGS =.
2.5V, ID =.
2.5A.
Max rDS(on) = 240mΩ at VGS =.
1.8V, ID =.
1.0A General.

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Published: May 3, 2007 |