Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
DC/DC converter
Features
- 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V.
- Low gate charge.
- Fast switching.
- High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbo l
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed Power Dissipation for Single Operation
(Note 3) (.