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FDD6688S Datasheet 30V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDD6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Overview

FDD6688S May 2004 FDD6688S 30V N-Channel PowerTrench SyncFET™.

Key Features

  • 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V.
  • Low gate charge (31 nC typical).
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation for Single Operation (Note 3) (Note.

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