This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Overview
FDD6685 March 2015 FDD6685
30V P-Channel PowerTrench® MOSFET.
Key Features
40 A,.
30 V. RDS(ON) = 20 mΩ @ VGS =.
10 V RDS(ON) = 30 mΩ @ VGS =.
4.5 V.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Qualified to AEC Q101
D G
S G
S TO-252
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note.