FDB4030L N-Channel MOSFET

Fairchild Semiconductor

Description

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol.

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Datasheet Specifications

Part number: FDB4030L
Manufacturer: Fairchild Semiconductor
File Size: 93.97 KB
Datasheet: FDB4030L-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are p

Applications

* such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 20 A, 30 V. RDS(ON) = 0.035 Ω RDS(ON) = 0.055 @ Ω VGS=10 V @ VGS=4.5V. Critical DC electrical parameters specified at elevated temperature. Rugg

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FDB4030L N-Channel MOSFET Fairchild Semiconductor

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