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FDB035N10A - N-Channel MOSFET

Description

This N Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Features

  • RDS(on) = 3.0 mW ( Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 89 nC ( Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.0 mW ( Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge, QG = 89 nC ( Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter DATA SHEET www.onsemi.com VDSS RDS(ON) MAX ID MAX 100 V 3.
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